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Design of 1178 nm diode laser with step waveguide layers for reduced voltage and low vertical divergence
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-09-17 , DOI: 10.1088/1361-6641/abaaef
Xiaolong Ma 1 , Kun Xu 1 , Peng Yang 1 , Xiangyang Duan 1 , Ximin Tian 1 , Anjin Liu 2, 3
Affiliation  

A 1178 nm diode laser with step waveguide layers (SWGLs) into the optical cavity is designed for frequency doubling. It is found that the mode field of the fundamental mode can be modulated easily for this kind of diode laser. A strong confinement for the fundamental mode can also be achieved by adopting a low Al content in the optical cavity. Diode lasers with SWGLs can deliver a high output power. Compared with diode lasers based on the conventional large optical cavity, the low Al content results in a reduced voltage, which is helpful to improve the electro-optical conversion efficiency. Based on an asymmetric large optical cavity with SWGLs, a beam divergence of 15.5° in the vertical direction is obtained for the designed diode laser.

中文翻译:

具有阶跃波导层的1178 nm二极管激光器的设计,可降低电压和降低垂直发散

1178 nm二极管激光器具有进入光腔的阶梯波导层(SWGL),旨在实现倍频。已经发现,对于这种二极管激光器,可以容易地调制基本模式的模式场。通过在光腔中采用低的Al含量也可以实现对基本模式的严格限制。带有SWGL的二极管激光器可以提供高输出功率。与基于常规大光腔的二极管激光器相比,低含量的铝导致电压降低,这有助于提高电光转换效率。基于带有SWGL的非对称大光腔,对于设计的二极管激光器,垂直方向的光束发散角为15.5°。
更新日期:2020-09-20
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