In this paper, a design for an electron blocking layer (EBL) is proposed to enhance the wall plug efficiency of InGaN-based laser diodes. Using calibrated 3D simulations (including thermal models), a comprehensive analysis of various design aspects (composition, thickness and p-doping) of EBLs is conducted, including their impact on carrier (electron and hole) wavefunction overlap and stimulated recombination rate in the quantum wells (QWs) along with the space charge density, electric field and free carrier absorption (FCA) at the interface of the p-side waveguide/EBL. The results indicate that Poole–Frenkel emission is vital for consideration of FCA in the p-doped layers of the epitaxial structure. Consequently, the proposed EBL design reduces electron overflow, improves hole injection, decreases the internal absorption losses and thus, enhances the internal quantum efficiency of the device. The threshold current is reduced from 230 mA to 205 mA as compared to the reference st...

中文翻译：

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使用优化的Al 0.12 Ga 0.88 N电子阻挡层提高InGaN基激光二极管的效率

本文提出了一种电子阻挡层（EBL）设计，以提高InGaN基激光二极管的壁塞效率。使用校准的3D模拟（包括热模型），对EBL的各个设计方面（组成，厚度和p掺杂）进行了全面分析，包括其对载流子（电子和空穴）波函数重叠的影响以及量子中受激复合率的影响阱（QW）以及p侧波导/ EBL界面处的空间电荷密度，电场和自由载流子吸收（FCA）。结果表明，考虑外延结构的p掺杂层中的FCA，考虑Poole–Frenkel的发射至关重要。因此，提出的EBL设计减少了电子溢出，改善了空穴注入，减少了内部吸收损耗，因此，增强了器件的内部量子效率。与基准电流相比，阈值电流从230 mA降低至205 mA。