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III–V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding
ECS Journal of Solid State Science and Technology ( IF 1.8 ) Pub Date : 2020-09-17 , DOI: 10.1149/2162-8777/abb794
Kosuke Nishigaya , Katsuaki Tanabe

Monolithic on-chip integration of III–V compound semiconductor light-source components particularly on Si platforms is thought to be an important key technology in modern optoelectronics. Hydrogel-mediated semiconductor wafer bonding is an emerging technique for heterogeneous materials integration, simultaneously forming interfaces with high mechanical stability, electrical conductivity, optical transparency, and surface-roughness tolerance [K. Kishibe and K. Tanabe, Appl. Phys. Lett. , 115 , 081601 (2019)]. So far, its experimental demonstration has been limited to homogeneous Si/Si bonding and an application of solar-cell device. Here we demonstrate the fabrication and operation of a III–V light-emitting diode on Si, via heterogeneous GaAs/Si hydrogel-mediated wafer bonding. The bonding process is carried out in ambient air at room temperature, and therefore can potentially provide significant cost and throughput advantages in device production. Bonding with an unp...

中文翻译:

水凝胶介导的晶圆键合在硅上的III–V发光二极管

III-V化合物半导体光源组件的单片集成,特别是在Si平台上,被认为是现代光电技术中的重要关键技术。水凝胶介导的半导体晶圆键合是一种用于异质材料集成的新兴技术,可同时形成具有高机械稳定性,电导率,光学透明性和表面粗糙度容差的界面。Kishibe和K.Tanabe,应用。物理 来吧 ,115,081601(2019)]。到目前为止,其实验演示仅限于均匀的Si / Si键合和太阳能电池器件的应用。在这里,我们展示了通过异质GaAs / Si水凝胶介导的晶圆键合在Si上制造III–V发光二极管的过程和操作。粘合过程在室温下的环境空气中进行,因此可以在设备生产中提供显着的成本和吞吐量优势。与未粘接的...
更新日期:2020-09-20
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