We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1 THz obtained with a continuous laser at irradiation lower than 10 W cm − 2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10 THz. In addition, our experimental results show that the cut-off frequency of 3 dB attains 2 MHz in the dynamic modulation regime.

中文翻译：

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Epsilon 近零全光太赫兹调制器

我们提出了一种基于 InAs 半导体中光生成的超薄 epsilon-near-zero (ENZ) 板条的高效光驱动太赫兹调制器。我们通过实验证明了在 1 THz 下使用低于 10 W cm - 2 的连续激光获得的调制深度为 90%。除了 ENZ 吸收效应提供的 THz 传输的强衰减之外，我们还报告了从 1 到 10 THz 的太赫兹波。此外，我们的实验结果表明，3 dB 的截止频率在动态调制机制中达到 2 MHz。