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Black phosphorus field effect transistors stable in harsh conditions via surface engineering
Applied Physics Letters ( IF 4 ) Pub Date : 2020-09-14 , DOI: 10.1063/5.0021335
Bei Jiang 1, 2 , Hao Huang 3 , Rui Chen 3 , Guoli Li 1 , Denis Flandre 1, 4 , Da Wan 5 , Xue Chen 6 , Xingqiang Liu 1 , Cong Ye 2 , Lei Liao 1, 3
Affiliation  

Black phosphorus (BP) has potential for fabricating p-type transistors in ultra-thin 2D-material complementary circuits. However, as the synergetic effect of water and oxygen leads to performance degradation under an ambient atmosphere, it is urgent to develop a passivation strategy for robust stability. Herein, a scalable superhydrophobic passivation layer is designed to improve the stability of BP transistors, which consists of fluoroalkylsilane-coated titanium dioxide (TiO2) nanoparticles. Due to the superhydrophobic property of the passivation layer, the BP transistors preserve intrinsic performance in extremely wet conditions, including humid air, water, HCl, and KOH. After 28 days in atmospheric conditions, the performance presents only 20% channel current degradation and the device can work even after 60 days. This work not only experimentally demonstrates robust stable BP transistors in harsh conditions but also provides a highly efficient and damage-free strategy to suppress the influence of water adsorption in atmospheric conditions for highly stable 2D materials devices.

中文翻译:

通过表面工程在恶劣条件下稳定的黑磷场效应晶体管

黑磷 (BP) 具有在超薄二维材料互补电路中制造 p 型晶体管的潜力。然而,由于水和氧气的协同作用导致环境大气下的性能下降,因此迫切需要开发一种具有强大稳定性的钝化策略。在此,可扩展的超疏水钝化层旨在提高 BP 晶体管的稳定性,其由氟烷基硅烷涂层的二氧化钛 (TiO2) 纳米粒子组成。由于钝化层的超疏水特性,BP 晶体管在极其潮湿的条件下(包括潮湿空气、水、HCl 和 KOH)保持固有性能。在大气条件下28天后,性能仅表现出20%的通道电流衰减,该器件甚至可以在60天后工作。
更新日期:2020-09-14
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