Carrier compensation traps in n−-GaN drift layers grown on Si substrates were investigated using high-temperature deep-level transient spectroscopy (DLTS). The upper limit of the temperature range (700 K) allows for the study of deeper levels in the bandgap than those previously reported by conventional DLTS. Three trap states were revealed to be responsible for carrier compensation. Besides the residual carbon (C) acceptor, two deep electron traps detected in the DLTS high-temperature range, labeled E2 and E3 with energies EC of 0.98 and 1.38 eV, respectively, were also found to have contributions to the carrier compensation. A comprehensive investigation combining with positron annihilation spectroscopy measurements revealed that E2 and E3 are related to the (–/2–) and (0/–) acceptor levels of the VGa–ON complex, respectively. The relatively high concentrations of E2 and E3 imply that the VGa–ON complex is an essential carrier compensation source in the drift layer and plays a crucial role in developing kV-class vertical GaN power devices.

中文翻译：

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通过高温深能级瞬态光谱研究 n--GaN 漂移层中的载流子补偿陷阱

使用高温深能级瞬态光谱 (DLTS) 研究了在 Si 衬底上生长的 n--GaN 漂移层中的载流子补偿陷阱。温度范围的上限 (700 K) 允许研究带隙中比传统 DLTS 先前报告的更深的能级。揭示了三个陷阱状态负责载波补偿。除了残留的碳 (C) 受体之外，还发现在 DLTS 高温范围内检测到的两个深电子陷阱，分别标记为 E2 和 E3，能量 EC 分别为 0.98 和 1.38 eV，也对载流子补偿有贡献。结合正电子湮没光谱测量的综合研究表明，E2 和 E3 分别与 VGA-ON 复合物的 (–/2–) 和 (0/–) 受体水平相关。