Bright emission from non-classical light sources is a key requirement for their practical use in quantum optics. In this Letter, we report on an alternative approach to realize high-brightness nanowire emitters in the telecom band. We discuss the growth and optical properties of a single InA s 0.68 P 0.32 quantum dot in an InA s 0.50 P 0.50 quantum rod, all embedded in an InP nanowire waveguide. Modifying the bandgap energy of the matrix surrounding the quantum dot by inserting it into an InA s 0.50 P 0.50 quantum rod, instead of InP, reduces the barrier height for carriers in the dot. As a result, light emission at λ = 1310 nm is reached from an InA s 0.68 P 0.32 dot grown with the same deposition conditions as that used for λ = 950 nm emission in the conventional structure. We demonstrate that the dot-in-a-rod (DROD) configuration increases (up to fivefold) the emission rate of the emitters at 1310–1550 nm as compared to those grown with the higher dot aspect ratio required when not using the DROD structure. Carrier generation localized to the dot (quasi-resonant scheme) is achieved by optically pumping the rod below the InP bandgap.

中文翻译：

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嵌入在光子纳米线波导中的单量子棒中用于电信波段发射

非经典光源的明亮发射是它们在量子光学中实际应用的关键要求。在这封信中，我们报告了在电信频段实现高亮度纳米线发射器的替代方法。我们讨论了 InA s 0.50 P 0.50 量子棒中单个 InA s 0.68 P 0.32 量子点的生长和光学特性，所有量子点都嵌入 InP 纳米线波导中。通过将量子点插入 InA s 0.50 P 0.50 量子棒而不是 InP 来修改围绕量子点的矩阵的带隙能量，降低了点中载流子的势垒高度。结果，从以与常规结构中用于λ=950nm发射的沉积条件相同的沉积条件生长的InA s 0.68 P 0.32 点达到λ=1310nm处的光发射。我们证明，与不使用 DROD 结构时以更高点纵横比生长的发射器相比，棒中点 (DROD) 配置增加了（高达五倍）发射器在 1310-1550 nm . 通过光泵浦 InP 带隙以下的棒来实现定位于点的载流子生成（准谐振方案）。