Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 °C for 30 min under ${\mathrm{N}}_2$ atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for $\mathrm{T}{\mathrm{i}}^{3+}$ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local ${\mathrm{N}}_2$ concentration during annealing.

中文翻译：

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N2退火钛酸锶锶钡薄膜的可调性和损耗改善的根源

钛酸锶钡（BSTO）薄膜通过高通量蒸发物理气相沉积法沉积在Pt（111）上，然后在650°C下退火30分钟。 ${\mathrm{ñ}}_2$大气层。使用先进的透射电子显微镜，能量色散X射线能谱和电子能量损失能谱，我们直接表明N不仅可以代替BSTO晶格中的O，而且还可以补偿$\mathrm{Ť}{\mathrm{一世}}^{3+}$离子，抑制电导率，从而减少介电损耗并增强介电可调性。但是，这种影响在薄膜边缘附近被忽略了，在该边缘我们推测暴露的Pt充当了吸附/吸收的O的储库并改变了局部${\mathrm{ñ}}_2$ 退火过程中的浓度。