Effects of π-Bridge on Fused-Ring Electron Acceptor Dimers,ACS Applied Polymer Materials

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Effects of π-Bridge on Fused-Ring Electron Acceptor Dimers
ACS Applied Polymer Materials ( IF 4.4 ) Pub Date : 2020-09-18 , DOI: 10.1021/acsapm.0c00748
Guilong Cai _{1,

2,

3} , Yuhao Li ₃ , Jiayu Wang ₂ , Yiqun Zhang ₃ , Xinhui Lu ₃ , Jiarong Lian ₁ , Pengju Zeng ₁ , Yiping Wang ₁ , Xiaowei Zhan ₂

Affiliation

Two nonfullerene acceptors (TTIDIC and BTIDIC), consisting of indacenodithiophene (IDT) dimers bridged with electron-rich thienothiophene (TT) or electron-accepting benzothiadiazole (BT), were synthesized and compared with their counterpart SIDIC without a bridge to study effects of the bridge nature. Their thin-film absorption spectra and bandgaps are similar. The electron-rich TT bridge slightly up-shifts, whereas the electron-poor BT bridge slightly down-shifts energy levels of the dimers. Both TT and BT bridges enhance the electron mobilities of the dimers. When using polymer J71 as an electron donor, SIDIC-, TTIDIC-, and BTIDIC-based photovoltaic cells show efficiencies of 9.71, 6.54, and 11.5%, respectively. Compared to TT bridge, the BT bridge improves photovoltaic performance of the dimers.

中文翻译：

π桥对稠环电子受体二聚体的影响

合成了两个非富勒烯受体（TTIDIC和BTIDIC），它们由茚达二并噻吩（IDT）二聚体与富电子的噻吩并噻吩（TT）或电子接受的苯并噻二唑（BT）桥联而成，并与对应的SIDIC进行了比较，而没有研究桥联二噻吩的效应。桥自然。它们的薄膜吸收光谱和带隙相似。富电子的TT桥略微上移，而贫电子的BT桥略微下移二聚体的能级。TT桥和BT桥均增强了二聚体的电子迁移率。当使用聚合物J71作为电子供体时，基于SIDIC，TTIDIC和BTIDIC的光伏电池分别显示出9.71、6.54和11.5％的效率。与TT桥相比，BT桥提高了二聚体的光伏性能。

更新日期：2020-09-18

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