Influence of dipolar alignments of a ferroelectric poly-vinylidine fluoride trifluroethylene [P(VDF-TrFE)] thin film on the charge mobility and nonvolatile property of ferroelectric field-effect transistors (FeFETs) has been explored. The electrical properties of the ferroelectric microstructures can be tuned by adopting different cooling procedures after annealing the spin-coated ferroelectric polymer P(VDF-TrFE) substrates. For example, a higher degree of alignment of the C–F dipoles in the polymeric chains is observed along the substrate surface for the samples with fast quenching. The dielectric constant of the fast-quenched sample is found to be ∼10 at 1 kHz, while the same is found to be ∼8.5 when the rate of cooling is relatively slower. Furthermore, the fabrication of a metal–insulator–metal capacitor using the fast-quenched substrate leads to a high remnant polarization of P_r ∼ 5.5 ± 0.2 μC/cm², as compared to that of the normally cooled sample to ∼2.7 ± 0.2 μC/cm², at an applied field intensity of 200 MV/m. Emergence of such characteristics encouraged the use of P(VDF-TrFE) as a gate dielectric layer, which leads to improved nonvolatile characteristics of the device. The measured charge carrier mobility of FeFETs embedded with a fast-quenched ferroelectric polymer as a gate dielectric is found to be ∼3.4 × 10^–2 cm² V^–1 s^–1, which is ∼35% higher than the normally cooled samples. The strongly correlated C–F dipoles in the fast-quenched ferroelectric layers lead to the reduction in width of the trap density of states near the semiconductor–dielectric interface. The XPS and UPS characterizations show the formation of a superior transport channel in the semiconductor near its dielectric interface when the fast-quenched polymer is used as the gate dielectric in the FeFETs.

中文翻译：

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FeFET的铁电介质层中的偶极对准可提高电荷迁移率和非易失性存储器

研究了铁电聚偏氟乙烯三氟乙烯[P（VDF-TrFE）]薄膜的偶极取向对铁电场效应晶体管（FeFET）的电荷迁移率和非易失性的影响。在对旋涂的铁电聚合物P（VDF-TrFE）基板进行退火之后，可以通过采用不同的冷却程序来调整铁电微结构的电性能。例如，对于快速淬灭的样品，沿着基材表面观察到聚合物链中C-F偶极子的排列程度较高。快速淬火样品的介电常数在1 kHz时约为10，而在冷却速度相对较慢时，介电常数约为8.5。此外，P _{- [R}〜5.5±0.2μC/厘米²相比于正常冷却的样品至~2.7±0.2μC/厘米，²，在200 MV / m的施加磁场强度。这种特性的出现鼓励使用P（VDF-TrFE）作为栅极介电层，从而提高了器件的非易失性。嵌入快速淬火铁电聚合物作为栅极电介质的FeFET的测得的载流子迁移率约为3.4×10 ^–2 cm ² V ^–1 s ^–1比正常冷却的样品高约35％。快速淬灭的铁电层中强相关的C-F偶极子导致半导体-电介质界面附近的态陷阱密度的减小。XPS和UPS的特性表明，当快速淬灭的聚合物用作FeFET中的栅极电介质时，在其电介质界面附近的半导体中会形成一个优良的传输通道。