Si‐Al‐C‐O materials are well‐known as a good precursor material for obtaining a dense, excellent heat‐resistant SiC polycrystalline materials. Although it has been found that the aluminum contained in Si‐Al‐C‐O materials plays an important role in obtaining dense SiC materials, its actual behavior during heat‐treatment processes has not been investigated. In this study, we investigated the behavior of aluminum contained in the SiC crystals, during the densification of SiC crystals produced from the Si‐Al‐C‐O material. A part of the aluminum contained in the SiC crystals plays an important role in creating a thermodynamically stable grain boundary by the diffusional transportation of aluminum to the SiC grain boundaries at temperatures above 1700°C. Subsequently, most of the aluminum disappeared during the heat treatment at higher temperatures (~1900°C); as a consequence, a dense SiC solid solution with uniformly distributed residual aluminum (0.15wt%) was formed without a secondary phase at the grain boundary.

中文翻译：

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源自聚合物的SiC晶体中所含Al对建立稳定的晶界的影响

Si-Al-C-O材料是获得致密，优异的耐热SiC多晶材料的良好前驱材料。尽管已发现Si-Al-C-O材料中包含的铝在获得致密SiC材料方面起着重要作用，但尚未研究其在热处理过程中的实际行为。在这项研究中，我们研究了由Si-Al-C-O材料制成的SiC晶体致密化过程中SiC晶体中所含铝的行为。SiC晶体中包含的一部分铝在高于1700°C的温度下通过铝向SiC晶界的扩散传输而在创建热力学稳定的晶界方面起着重要作用。后来，在较高温度（〜1900°C）下的热处理过程中，大多数铝消失了；结果，形成了具有均匀分布的残留铝（0.15wt％）的致密的SiC固溶体，在晶界处没有第二相。