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Semiconductor/relaxor 0–3 type composites as a novel strategy for energy storage capacitors
Journal of Science: Advanced Materials and Devices ( IF 7.382 ) Pub Date : 2021-03-01 , DOI: 10.1016/j.jsamd.2020.09.012
A.R. Jayakrishnan , J.P.B. Silva , K. Kamakshi , V. Annapureddy , I.F. Mercioniu , K.C. Sekhar

Abstract In this work, we report a novel strategy to enhance the dielectric breakdown strength and the energy storage performance of lead-free relaxor ferroelectric ceramics through the fabrication of semiconductor/relaxor 0–3 type composites based on 0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3 [BZCT] and ZnO. X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM) measurements confirm the formation of semiconductor/relaxor 0–3 type composites, in which ZnO particles are randomly distributed at the grain boundaries of BZCT. Further, the XRD analysis suggests a structural phase change from a tetragonal to a pseudocubic phase as the ZnO content increases from 0 to 5 wt. % in BZCT/ZnO composites. The pseudocubic phase favors the relaxor behavior of the composites as is evident from dielectric studies. The polarization-electric field (P-E) loops reveal the ferroelectric nature of the BZCT/ZnO composites. The energy storage properties of BZCT/ZnO composite ceramics as a function of different wt. % of ZnO are found to be optimum at 1 wt. % with a recoverable energy density of 2.61 J/cm3 and an efficiency of 74.2%, at an electric field of 282 kV/cm. Besides, an enhancement of 166% in the electric breakdown and 220% in the recoverable energy density was achieved compared to the BZCT ceramics due to the improved density and the large value of ΔP = Pm - Pr (25.55 μC/cm2). Therefore, this work evidences that the formation of semiconductor/relaxor 0–3 type composites can be an effective way to significantly improve the energy storage performance of lead-free relaxor ferroelectric ceramics.

中文翻译:

半导体/松弛器 0-3 型复合材料作为储能电容器的新策略

摘要 在这项工作中,我们报告了一种通过制备基于 0.6Ba(Zr0.2Ti0.8) 的半导体/弛豫 0-3 型复合材料来提高无铅弛豫铁电陶瓷的介电击穿强度和储能性能的新策略。 )O3-0.4(Ba0.7Ca0.3)TiO3 [BZCT] 和 ZnO。X 射线衍射 (XRD)、拉曼光谱和扫描电子显微镜 (SEM) 测量证实了半导体/弛豫 0-3 型复合材料的形成,其中 ZnO 颗粒随机分布在 BZCT 的晶界处。此外,XRD 分析表明,随着 ZnO 含量从 0 重量增加到 5 重量%,结构相变从四方相变为假立方相。BZCT/ZnO 复合材料中的百分比。从介电研究中可以明显看出,伪立方相有利于复合材料的弛豫行为。极化电场 (PE) 回路揭示了 BZCT/ZnO 复合材料的铁电性质。BZCT/ZnO复合陶瓷的储能性能随不同重量的变化。发现 ZnO 的最佳百分比为 1 重量%。在 282 kV/cm 电场下,可恢复能量密度为 2.61 J/cm3,效率为 74.2%。此外,与 BZCT 陶瓷相比,由于密度的提高和较大的 ΔP = Pm - Pr (25.55 μC/cm2) 值,实现了 166% 的电击穿和 220% 的可恢复能量密度的增强。因此,这项工作证明了半导体/弛豫0-3型复合材料的形成可以成为显着提高无铅弛豫铁电陶瓷储能性能的有效途径。
更新日期:2021-03-01
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