Abstract This work reports the effect of thermal annealing ranging from 0 to 800 °C on the various properties of zinc oxide thin film grown using radio-frequency sputtering. X-ray diffraction studies reveal the relaxation of stress up to thermal annealing of 400 °C and induction of residual stress thereafter. Zn K-edge X-ray absorption spectroscopic measurements reveal the variation of Zn–O and Zn–Zn bond distances with annealing temperature. Variation of coordination number with annealing temperature shows onset of oxygen vacancies at lower annealing temperatures. These vacancies and defects are also supported by the photoluminescence measurements. The optical band-gap of these films exhibit a significant variation with annealing temperature, which is in-line with the variation of crystallite size. Further, the magnetic behavior of these films is observed to follow the behavior of O 2p states along with defects as investigated from the X-ray magnetic circular dichroism.

中文翻译：

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热退火对ZnO薄膜性能的影响

摘要 这项工作报告了 0 到 800 °C 的热退火对使用射频溅射生长的氧化锌薄膜的各种性能的影响。X 射线衍射研究表明，在 400 °C 的热退火后应力松弛，此后会产生残余应力。Zn K 边 X 射线吸收光谱测量揭示了 Zn-O 和 Zn-Zn 键距随退火温度的变化。配位数随退火温度的变化表明在较低的退火温度下出现氧空位。光致发光测量也支持这些空位和缺陷。这些薄膜的光学带隙随着退火温度的变化而显着变化，这与微晶尺寸的变化一致。更多，