Abstract The Al/n-type Si Schottky barrier diodes (SBDs) were prepared with Au-Cu phthalocyanine (Au-CuPc) interlayers with different Au and CuPc compositional ratios, probed their temperature dependent current-voltage (I–V) and low frequency noise properties. The Schottky barrier properties like barrier height and the ideality factor are strongly temperature dependent, implying the existence of Schottky barrier inhomogeneities. The barrier inhomogeneities was elucidated using thermionic emission theory based on the assumption of Gaussian distribution of the barrier heights. Further, a divergence in the barrier heights evaluated from the I–V characteristics and Norde's method indicates a deviation of the Al/Au–CuPc/n-type Si SBDs behavior from thermionic emission. The Richardson plot evaluated with the Gaussian distribution of barrier heights method yielded Richardson constant values close to theoretical Richardson constant of n-type Si. The room temperature current noise power spectral density (SI) of the Al/Au–CuPc/n-type Si SBDs having various Au and CuPc concentrations showed a reciprocal of frequency (1/f)γ behavior having γ values near to unity. The decrease in SI and γ with increasing Au concentration in Au-CuPc interlayers was indicative of lessening barrier inhomogeneity. This was also correlated with the decrease in the value of standard deviation derived using temperature dependent I–V characteristics. Further investigations revealed that origins of 1/f noise could be associated with the fluctuations of barrier height and carrier mobility for Al/Au–CuPc/n-type Si SBDs with lower and higher Au compositions in Au-CuPc interlayers, respectively.

中文翻译：

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具有 Au-Cu 酞菁中间层的 Al/n 型 Si 肖特基势垒二极管的温度相关肖特基势垒特性

摘要 用不同 Au 和 CuPc 组成比的 Au-Cu 酞菁 (Au-CuPc) 中间层制备了 Al/n 型 Si 肖特基势垒二极管 (SBD)，探测它们的温度相关电流-电压 (I-V) 和低频噪声特性。肖特基势垒特性（如势垒高度和理想因子）强烈依赖于温度，这意味着存在肖特基势垒不均匀性。基于势垒高度的高斯分布假设，使用热电子发射理论阐明了势垒不均匀性。此外，根据 I-V 特性和 Norde 方法评估的势垒高度的差异表明 Al/Au-CuPc/n 型 Si SBD 行为与热电子发射的偏差。用势垒高度的高斯分布方法评估的理查森图产生的理查森常数值接近于 n 型硅的理论理查森常数。具有不同 Au 和 CuPc 浓度的 Al/Au-CuPc/n 型 Si SBD 的室温电流噪声功率谱密度 (SI) 表现出频率 (1/f) γ 的倒数行为，γ 值接近于 1。随着 Au-CuPc 夹层中 Au 浓度的增加，SI 和 γ 的降低表明势垒不均匀性降低。这也与使用依赖于温度的 I-V 特性得出的标准偏差值的降低相关。