Abstract The efficiency of dye-sensitized solar cells (DSSCs) is limited by the recombination of electrons in fluorine-doped tin oxide (FTO) with the electrolyte species at the FTO/mesoporous semiconductor interface. This predicament can be addressed by employing a dense blocking layer (BL). Herein, we investigate the effects of BaSnO3 (BSO) thin film deposited by the radio-frequency sputtering method as a BL in BSO-based DSSCs. A range of thicknesses of up to 100 nm are examined, and it is shown that a thickness of ∼50 nm is the optimum value for BL in BSO-based DSSCs. This BL can generate an efficiency enhancement of about 50% from 2.6% for bare BSO-based DSSC to 3.9% for the DSSC with a ∼50 nm BL. This improvement is achieved by surpassing the recombination at the FTO/BSO interface and thus increasing the electron lifetime that results in a better photovoltaic performance.

中文翻译：

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射频溅射阻挡层对提高BaSnO3基染料敏化太阳能电池性能的影响

摘要 染料敏化太阳能电池 (DSSC) 的效率受到掺氟氧化锡 (FTO) 中电子与 FTO/介孔半导体界面处的电解质物质复合的限制。这种困境可以通过采用致密阻挡层 (BL) 来解决。在此，我们研究了通过射频溅射方法沉积的 BaSnO3 (BSO) 薄膜作为 BSO 基 DSSC 中的 BL 的影响。检查了高达 100 nm 的厚度范围，结果表明，在基于 BSO 的 DSSC 中，约 50 nm 的厚度是 BL 的最佳值。这种 BL 可以产生大约 50% 的效率提高，从基于 BSO 的裸 DSSC 的 2.6% 到具有~50 nm BL 的 DSSC 的 3.9%。