Abstract We report the results of a study into the impact of irradiation with 0.9 MeV electrons on the main properties of 4H-SiC MOSFETs of 1.2 kV class at irradiation doses Φ within the range from 0.125 to 3 MGy (fluence F from 75 × 1014 to 1.2 × 1016 cm−2). The effects of irradiation on the threshold voltage, leakage current, output characteristics, and channel electron mobility have been studied. The results obtained are compared with the known data on the irradiation of high-voltage 4H-SiC MOSFETs with 4.5 MeV electrons and γ-photons from a60Co source. It is shown that the parameter variations of the MOSFETs under influence of irradiation depends on both the dose and the electron energy. A high radiation hardness of the structures under study has been demonstrated.

中文翻译：

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0.9 MeV电子辐照对高压垂直功率4H-SiC MOSFET主要性能的影响

摘要 我们报告了 0.9 MeV 电子辐照对 1.2 kV 级 4H-SiC MOSFET 主要性能影响的研究结果，辐照剂量 Φ 范围为 0.125 至 3 MGy（能量密度 F 从 75 × 1014 至1.2 × 1016 cm−2)。研究了辐照对阈值电压、漏电流、输出特性和沟道电子迁移率的影响。将获得的结果与用 4.5 MeV 电子和来自 60Co 源的 γ 光子辐照高压 4H-SiC MOSFET 的已知数据进行比较。结果表明，MOSFET在辐照影响下的参数变化取决于剂量和电子能量。已证明所研究结构的高辐射硬度。