Abstract In this work, we put forward the length design principle of the dual-injection integrated Ge-on-Si photodetectors based on the characteristics of the light field distribution. When the length of the absorption layer makes the maximum intensity of the incident light from both ends are alternately distributed, the light field distribution is more uniform. Based on this principle, the shorter photodetector could get better saturation performance. Two dual-injection photodetectors with the length of 6 μ m and 10 μ m have been investigated, the experimental results show that the saturation current of 6 μ m length device is 18.33% higher, and the bandwidth is 138.60% higher at 10 mW incident power comparing with the 10 μ m length device. The 6 μ m length photodetector realized a responsivity of 1.07 A/W, a bandwidth of 37.3 GHz at 50 μ W luminous power @1550 nm.

中文翻译：

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优化光场分布的高饱和功率双注入Ge-on-Si光电探测器

摘要 本文根据光场分布特点提出了双注入集成Ge-on-Si光电探测器的长度设计原则。当吸收层的长度使两端入射光的最大强度交替分布时，光场分布更均匀。基于这个原理，较短的光电探测器可以获得更好的饱和性能。研究了两种长度分别为 6 μm 和 10 μm 的双注入光电探测器，实验结果表明，6 μm 长度器件的饱和电流提高了 18.33%，在 10 mW 入射时带宽提高了 138.60%与 10 μ m 长度器件相比的功率。6 μ m 长的光电探测器实现了 1.07 A/W 的响应度，37 的带宽。