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A −40 ​°C–125 ​°C, 1.08 ​ppm/°C, 918 ​nW bandgap voltage reference with segmented curvature compensation
Microelectronics Journal ( IF 1.9 ) Pub Date : 2020-09-18 , DOI: 10.1016/j.mejo.2020.104897
Tianzheng Yan , Chi-Wa U , Man-Kay Law , Chi-Seng Lam

This paper proposes a precision bandgap voltage reference (BGR) with a segmented curvature compensation technique, demonstrating both small temperature coefficient (TC) and low power consumption. By segmenting the output voltage of a conventional first-order BGR over a wide temperature range and implementing compensation for each segment, the output reference voltage can be systematically aligned to an identical voltage level, effectively reducing the achievable TC. An additional circuit consists of comparators, logic gates, switches and current mirrors is proposed to achieve this compensation scheme, which also optimizes the overall BGR power consumption. Implemented and simulated in a standard 65 ​nm CMOS process, the proposed BGR achieves an average output of 496.17 ​mV and a TC of 1.08 ​ppm/°C from −40 ​°C to 125 ​°C. It consumes a current of 765 ​nA under a 1.2 ​V supply while exhibiting a line regulation of 0.725%/V with VDD from 1.0 to 1.8 ​V ​at 27 ​°C.



中文翻译:

带分段曲率补偿的−40°C–125°C,1.08 ppm /°C,918 nW带隙电压基准

本文提出了一种采用分段曲率补偿技术的精密带隙基准电压源(BGR),该基准电压源具有较小的温度系数(TC)和低功耗。通过在较宽的温度范围内对常规一阶BGR的输出电压进行分段并对每个分段实施补偿,可以将输出参考电压系统地对准至相同的电压电平,从而有效地降低了可达到的TC。为了实现这种补偿方案,提出了一个由比较器,逻辑门,开关和电流镜组成的附加电路,该电路还可以优化BGR的整体功耗。拟议的BGR在标准65纳米CMOS工艺中实施和仿真,在−40°C至125°C的温度范围内实现了496.17 mV的平均输出和1.08 ppm /°C的TC。在27°C时DD从1.0到1.8V。

更新日期:2020-09-29
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