Recently, nanocomposite materials that consist of chitosan (CS) and graphene oxide (GO) have received immense attention in many fields of research, such as biomedicine, environmental studies, energy and electronics. In this paper, we study resistive memory devices in capacitor-like Ag/CS-GO/FTO structures, with the CS-GO nanocomposites acting as the memory layer. The devices showed a bipolar resistive-switching effect under an external electric field, with the endurance of 10³ and ON/OFF ratio around 10². The calculated results confirmed by using density-function-theory (DFT) calculations show the stability of CS-GO nanocomposites through the presence of peptide and hydrogen bonds. Moreover, the calculated HOMO–LUMO gap (HLG) of GO is within the HLG of CS, so several unoccupied levels of GO can serve as electron traps in CS-GO nanocomposites. Based on these results above, a resistive-switching mechanism in Ag/CS-GO/FTO devices can be proposed because of the trap/de-trap process of injected electrons under external electric field.

近年来，由壳聚糖（CS）和氧化石墨烯（GO）组成的纳米复合材料在许多研究领域受到了极大的关注，例如生物医学，环境研究，能源和电子学。在本文中，我们以CS-GO纳米复合材料作为存储层，研究了电容器状Ag / CS-GO / FTO结构的电阻存储器件。该器件在外部电场下显示出双极阻性开关效应，耐久性为10 ³，开/关比约为10 ²。通过使用密度泛函理论（DFT）计算所证实的计算结果表明，通过存在肽和氢键，CS-GO纳米复合材料具有稳定性。此外，GO的计算出的HOMO-LUMO间隙（HLG）在CS的HLG范围内，因此，GO的几个未占据水平可作为CS-GO纳米复合材料中的电子陷阱。基于以上这些结果，由于在外部电场下注入电子的俘获/去俘获过程，可以提出Ag / CS-GO / FTO器件中的电阻切换机制。