Abstract In(1–x)Al(x)Sb films with four Al relative concentrations (0, 20, 30 and 40%) were deposited using magnetron sputtering onto a SiO2/Si substrate and subsequently irradiated with 14 MeV Au6+ ions with fluences in the range of 1 × 1012–3 × 1014 cm−2. Grazing incidence X-ray diffraction analysis showed the formation of a polycrystalline compound structure with a zinc blende phase for all of the In(1–x)Al(x)Sb films. When irradiated, it is easier to amorphize ternary compound (In(1-x)Al(x)Sb) than its binary counterparts (InSb and AlSb), and there was no indication of the amorphous phase of AlSb or any other kind of irradiation-induced damage observed. In(1–x)Al(x)Sb films become porous after irradiation with sufficient fluence for all the Al concentrations studied (except AlSb) and for a given irradiation fluence, the higher the Al concentration in the film, the less porous it became after irradiation. In regard the chemical components on the surface of the films, X-ray photoelectron spectroscopy showed that there was no Al–Sb bonding on the surface and that there was a small increase in the relative amount of oxygen (except for Al 20%) in the irradiated samples when compared to non-irradiated ones.

中文翻译：

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离子辐射的化学计量相关孔隙率：In(1-x)Al(x)Sb 薄膜

摘要 使用磁控溅射将具有四种 Al 相对浓度（0、20、30 和 40%）的 In(1-x)Al(x)Sb 薄膜沉积到 SiO2/Si 衬底上，然后用 14 MeV Au6+ 离子辐照，其能量密度为1 × 1012–3 × 1014 cm−2 的范围。掠入射 X 射线衍射分析表明，所有 In(1-x)Al(x)Sb 薄膜都形成了具有闪锌矿相的多晶化合物结构。辐照时，三元化合物 (In(1-x)Al(x)Sb) 比其二元对应物（InSb 和 AlSb）更容易非晶化，并且没有迹象表明 AlSb 或任何其他类型的辐照是非晶相- 观察到的损伤。In(1-x)Al(x)Sb 薄膜在辐照后变得多孔，对于所有研究的 Al 浓度（AlSb 除外）和给定的辐照注量有足够的注量，薄膜中的 Al 浓度越高，辐照后的孔隙越少。对于薄膜表面的化学成分，X 射线光电子能谱表明，表面没有 Al-Sb 键，且氧的相对量（Al 20% 除外）略有增加。辐照样品与未辐照样品相比。