Temperature monitoring of reactor experiments is an important quality requirement. High-purity silicon carbide (SiC) can be used to provide such data through post-irradiation material analysis. This method stems from radiation defect concentrations’ dependence on irradiation temperature. Irradiation temperature can be determined by measuring irradiation-induced property changes, for example lattice spacing distribution, dimensions, electrical resistivity, etc.—after isochronal annealing. Such methods are time-consuming, since multiple steps must be performed in a serial manner. We investigated the possibility of using an alternative method that does not require multiple heat treatments. Instead, peak irradiation temperature is determined by a calibration curve comparing pre- and post-irradiation sample dimensions. The experimental results demonstrate the feasibility of this approach in the irradiation conditions described below. This approach can also be used to measuring changes in other properties mentioned above.

反应器实验的温度监控是重要的质量要求。高纯度碳化硅（SiC）可用于通过辐照后材料分析提供此类数据。该方法源于辐射缺陷浓度对辐射温度的依赖性。在等时退火之后，可以通过测量辐照引起的特性变化（例如晶格间距分布，尺寸，电阻率等）来确定辐照温度。由于必须以串行方式执行多个步骤，因此这种方法很耗时。我们研究了使用不需要多次热处理的替代方法的可能性。取而代之的是，峰值辐照温度由比较辐照前后样品尺寸的校准曲线确定。实验结果证明了这种方法在下述照射条件下的可行性。该方法也可以用于测量上述其他属性的变化。