We report on photo-related effects from doping for the reverse water gas shift reaction: enhanced photo-thermalization, and persistent CO yield post illumination generating a ‘memory’ effect. Bismuth substitution doping of Indium in Bi_z- In₂O_3-x(OH)_y material systems results in significantly increased CO rate with increasing photo-intensities. Urbach analysis reveals that optical-phonon energies in doped systems increase compared to undoped systems by a factor of 1.18–1.41 in CO₂+H₂ atmosphere, suggesting enhanced photo-thermalization at high photo-intensities. Persistent CO yield post photo-illumination for high-doped In₂O_3-x(OH)_y has a persistent period of 60 min in flow reactor with decay constant of 24.3 h in batch reactor, enhancing yield by 78% and 17%; low-doped and undoped systems present shorter prolonged production times with 30−40 min in flow reactor with longer decay constant of 31.0–31.5 hours in batch reactor. Linked to slow photocurrent decay trends which extends for 1−2 hours in undoped system, and more than 2 h for high doped system.

我们报告了通过掺杂进行反向水煤气变换反应所产生的与光相关的效应：增强的光热作用以及照明后产生的持久性CO产生“记忆”效应。Bi _z -In ₂ O _3-x（OH）_y材料系统中铟的铋取代掺杂会随着光强度的增加而显着提高CO率。Urbach分析表明，在CO ₂ + H ₂气氛中，掺杂系统中的光子能量与未掺杂系统相比，增加了1.18–1.41倍，表明在高光强度下光子热能增强。高掺杂In ₂ O _3-x（OH）的光照射后的持久CO产量_y在流动反应器中具有60分钟的持续时间，在间歇反应器中具有24.3 h的衰减常数，从而使产率分别提高了78％和17％；低掺杂和无掺杂系统在流式反应器中的生产时间缩短了30-40分钟，在间歇式反应器中的衰减常数更长，为31.0-31.5小时。与缓慢的光电流衰减趋势相关，该趋势在未掺杂的系统中持续1-2小时，而在高掺杂的系统中持续2小时以上。