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Scratching lithography for wafer-scale MoS 2 monolayers
2D Materials ( IF 4.5 ) Pub Date : 2020-09-16 , DOI: 10.1088/2053-1583/aba99f
Zheng Wei 1, 2 , Mengzhou Liao 1, 2 , Yutuo Guo 1, 2 , Jian Tang 1, 2 , Yongqing Cai 1, 2 , Hanyang Chen 3 , Qinqin Wang 1, 2 , Qi Jia 1, 2 , Ying Lu 1, 2 , Yanchong Zhao 1, 2 , Jieying Liu 1, 2 , Yanbang Chu 1, 2 , Hua Yu 1, 2 , Na Li 1, 2 , Jiahao Yuan 1, 2 , Biying Huang 1, 2 , Cheng Shen 1, 2 , Rong Yang 1, 2, 3 , Dongxia Shi 1, 2, 4 , Guangyu Zhang 1, 2, 3, 4
Affiliation  

Monolayer MoS 2 is an emerging two-dimensional (2D) semiconductor with promise on novel electronics and optoelectronics. Standard micro-fabrication techniques such as lithography and etching are usually involved to pattern such materials for devices but usually face great challenges on yielding clean structures without edge, surface and interface contaminations induced during the fabrication process. Here a direct writing patterning approach for wafer-scale MoS 2 monolayers is reported. By controllable scratching by a tip, wafer-scale monolayer MoS 2 films on various substrates are patterned in an ultra-clean manner. MoS 2 field effect transistors fabricated from this scratching lithography show excellent performances, evidenced from a room-temperature on–off ratio exceeding 10 10 and a high field-effect mobility of 50.7 cm 2 V −1 s −1 , due to the cleanness of as-fabricated devices. Such scratching a...

中文翻译:

晶圆级MoS 2单层的刻划光刻

单层MoS 2是新兴的二维(2D)半导体,有望在新型电子学和光电子学领域得到应用。通常需要使用诸如光刻和蚀刻之类的标准微细加工技术来对器件的这种材料进行构图,但是在生产干净的结构而不会在制造过程中引起边缘,表面和界面污染的情况下,通常面临巨大的挑战。此处报道了一种用于晶圆级MoS 2单层的直接写入图案化方法。通过尖端的可控刮擦,可以以超干净的方式对各种基板上的晶圆级单层MoS 2膜进行构图。用这种刮擦光刻技术制造的MoS 2场效应晶体管表现出出色的性能,这从室温开关比超过10 10以及50.7 cm 2 V -1 s -1的高场效应迁移率可以看出,由于清洁的设备。这么抓...
更新日期:2020-09-18
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