For a comprehensive study of the growth mechanisms of Pb(Zr,Ti)O 3 (PZT), we employed a combinatorial sputtering method that enabled us to fabricate films with composition and substrate temperature gradients in-plane. The gradient of the amount of Pb supply was created using PZT ceramic and Pb 3 O 4 powder targets. The substrate temperature gradient was generated in an orthogonal direction by inserting a shadow mask between the heater and substrate. The PZT film was deposited on uniformly deposited (001)LaNiO 3 /Si in a substrate temperature range of 490 °C–570 °C. It was determined that although the growth condition of PZT films has a relatively large process window, the orientation is easily changed by the temperature and the amount of Pb supply. In addition, the range of the growth temperature, where the films show ferroelectricity decreases with decreasing the amount of Pb supply.

中文翻译：

---

溅射Pb（Zr，Ti）O 3薄膜相发展的组合研究

为了全面研究Pb（Zr，Ti）O 3（PZT）的生长机理，我们采用了组合溅射方法，该方法使我们能够制造出成分和衬底温度梯度在平面内的薄膜。使用PZT陶瓷和Pb 3 O 4粉末靶材创建Pb供给量的梯度。通过在加热器和基板之间插入荫罩在正交方向上产生基板温度梯度。PZT膜以490°C–570°C的基板温度范围沉积在均匀沉积的（001）LaNiO 3 / Si上。可以确定，尽管PZT膜的生长条件具有相对较大的工艺窗口，但其取向容易因温度和Pb的供给量而改变。另外，生长温度的范围