This paper reports the DC, RF and circuit-level performance analysis of short-channel Ge/Si based source-pocket engineered (SPE) vertical heterojunction tunnel field effect transistors (Ge/Si SPE-V-HTFETs) with and without a heterogeneous gate dielectric (HGD) structure for the first time. The DC performance parameters in terms of I ON /I OFF and subthreshold swing (SS) are investigated for the proposed V-HTFETs. The average SS for the proposed V-HTFET with an HGD is found to be as low as 20 mV dec −1 compared to V-HTFET without any HGD (26 mV dec −1 ) at V DS = 0.5 V. The proposed Ge/Si SPE-V-HTFET with an HGD possesses higher cut-off frequency of 502 GHz and maximum frequency of oscillation of 2.33 THz at V DS = 0.5 V over the Ge/Si SPE-V-HTFET without any HGD which possesses cut-off frequency of 273 GHz and maximum frequency of oscillation of 1.47 THz. The proposed Ge/Si SPE-V-HTFET with and without an HGD have then be...

中文翻译：

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异质栅极电介质对源极口袋工程Ge / Si异质结垂直TFET的DC，RF和电路级性能的影响

本文报告了带有和不带有异质栅极的短通道Ge / Si基源口袋工程（SPE）垂直异质结隧道场效应晶体管（Ge / Si SPE-V-HTFET）的直流，射频和电路级性能分析电介质（HGD）结构首次出现。针对提出的V-HTFET，研究了基于I ON / I OFF和亚阈值摆幅（SS）的DC性能参数。发现在V DS = 0.5 V时，与没有任何HGD的V-HTFET（26 mV dec -1）相比，具有HGD的V-HTFET的平均SS低至20 mV dec -1。具有HGD的Si SPE-V-HTFET的Ge / Si SPE-V-HTFET的截止频率为502 GHz，在V DS = 0.5 V时的最大振荡频率为2.33 THz，而没有任何HGD的Ge / Si SPE-V-HTFET频率为273 GHz，最大振荡频率为1。47太赫兹 所提议的带有/不带有HGD的Ge / Si SPE-V-HTFET将...