To study, dual frequency Townsend, glow and radio frequency DBDs in an Ar/NH3 Penning mixture, different voltages are applied on each electrode of a plane/plane DBD. The one which has the higher amplitude and frequency, VH, determines the discharge regime. The other one, which has a lower amplitude and frequency, VL, is more similar to a bias voltage. VH frequency ranges from 50 kHz to 13.56 MHz and VL frequency from 1 kHz to 2 MHz. The amplitude of VL is always kept lower than the breakdown voltage. The discharge behavior is characterized by space and phase resolved optical emission spectroscopy and Fourier transform of the plasma induced light intensity. When the frequencies of two voltages are close to each other, VL higher than 150 V increases the discharge light intensity. In glow and Townsend discharges, this increase is attributed to the enhancement of the plasma density, due to the ions drift from the plasma bulk to the cathode, which produces a higher secondary electron emission. For the radiofrequency discharge, the enhancement of the light intensity is attributed to an enhancement of the positive space charge due to the higher voltage amplitude. When the frequencies of two voltages are very different, e.g. for VL between 1 and 100 kHz and a 5.5 MHz -RF discharge, the behavior largely depends on VL amplitude. Above some low frequency (LF), the discharge tends to extinguish when VL amplitude is at its maximum. This is explained by a diminution of the plasma density resulting from the ion drift to the cathode due to VL. When VL is very high, it enhances the discharge intensity. This discharge amplification is associated with a transition from α- to Υ- RF mode, which only occurs when the two voltages have the same polarity. Whatever the RF discharge mode, α or Υ, the discharge is diffuse. To determine the interest of LF-RF dual frequency DBD for the PECVD, SiOx coatings, made with a single and a dual LF-RF frequency DBDs, are compared. It is concluded that the ɣ dual frequency removes OH functions from the material lattice and densifies the layer.

中文翻译：

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双频 DBD：施加电压的幅度和频率对 Glow、Townsend 和射频 DBD 的影响

为了研究 Ar/NH3 Penning 混合物中的双频 Townsend、辉光和射频 DBD，在平面/平面 DBD 的每个电极上施加不同的电压。具有较高振幅和频率的 VH 决定了放电方式。另一个具有较低幅度和频率 VL 更类似于偏置电压。VH 频率范围为 50 kHz 至 13.56 MHz，VL 频率范围为 1 kHz 至 2 MHz。VL 的幅度始终保持低于击穿电压。放电行为的特征在于空间和相位分辨光发射光谱以及等离子体诱导光强度的傅立叶变换。当两个电压的频率接近时，VL 高于 150 V 会增加放电光强度。在辉光放电和汤森放电中，这种增加归因于等离子体密度的提高，这是由于离子从等离子体体漂移到阴极，从而产生更高的二次电子发射。对于射频放电，光强的增强归因于电压幅值较高导致正空间电荷的增强。当两个电压的频率非常不同时，例如对于 1 到 100 kHz 之间的 VL 和 5.5 MHz α-RF 放电，行为很大程度上取决于 VL 幅度。高于某个低频 (LF)，当 VL 振幅达到最大值时，放电趋于熄灭。这是由于 VL 导致离子漂移到阴极导致等离子体密度减小。当 VL 非常高时，它增强了放电强度。这种放电放大与从 α- 到 Υ- RF 模式的转变有关，这仅在两个电压具有相同极性时发生。无论射频放电模式是 α 还是 Υ，放电都是扩散的。为了确定 LF-RF 双频 DBD 对 PECVD 的兴趣，比较了由单和双 LF-RF 频率 DBD 制成的 SiOx 涂层。得出的结论是，ɣ 双频从材料晶格中去除了 OH 函数并使层致密。