The mymargin metal–oxide–semiconductor mymargin (MOS)-controlled thyristor (MCT) has been characterized by MOS gating, high current rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extracting path for the electron current at the gate ground and develops a normally-OFF characteristic. As a composite structure made of MOS and bipolar junction transistors, the AS-MCT is susceptible to ionization damage. The total ionization dose (TID) effects on the XND1 AS-MCT (breakdown voltage 1800 V grade) with a dose up to 9160 Gy(SiO2) are reported. The experimental results of transfer, forward conductive, and forward blocking characteristics are presented. A novel phenomenon, denoted as “self-trigger”, is identified for the AS-MCT following $\gamma $ -ray exposures, which can account for the significant increase in anode current in the AS-MCT. This article proposes the mechanism behind the characteristic degradation from the TID damage in the AS-MCT, from a device physics perspective.

中文翻译：

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阳极短路MOS可控晶闸管电离损伤效应研究

mymargin 金属氧化物半导体 mymargin (MOS) 控制的晶闸管 (MCT) 具有 MOS 门控、高电流上升率和高阻断能力的特点。阳极短路 MCT（AS-MCT）与传统 MCT 的区别在于阳极短路结构，它在栅极接地处形成电子电流的提取路径，并产生常关特性。AS-MCT作为MOS和双极结型晶体管的复合结构，容易受到电离损伤。报告了剂量高达 9160 Gy(SiO2) 对 XND1 AS-MCT（击穿电压 1800 V 级）的总电离剂量 (TID) 影响。介绍了传输、正向传导和正向阻塞特性的实验结果。一种新现象，称为“自触发”，在 $\gamma $ -射线曝光后为 AS-MCT 确定，这可以解释 AS-MCT 中阳极电流的显着增加。本文从器件物理角度提出了 AS-MCT 中 TID 损坏导致特性退化的机制。