In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.,Small

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In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.
Small ( IF 13.0 ) Pub Date : 2020-09-17 , DOI: 10.1002/smll.202004276
Jian Tang _{1,

2} , Zheng Wei _{1,

2} , Qinqin Wang _{1,

2} , Yu Wang _{1,

2} , Bo Han ₃ , Xiaomei Li _{1,

2,

3} , Biying Huang _{1,

2} , Mengzhou Liao ₁ , Jieying Liu _{1,

2} , Na Li _{1,

2,

4} , Yanchong Zhao _{1,

2} , Cheng Shen _{1,

2} , Yutuo Guo _{1,

2} , Xuedong Bai _{1,

2} , Peng Gao ₃ , Wei Yang _{1,

2,

4,

5} , Lan Chen _{1,

2,

4} , Kehui Wu _{1,

2,

4} , Rong Yang _{1,

4,

5} , Dongxia Shi _{1,

2,

5} , Guangyu Zhang _{1,

2,

4,

5}

Affiliation

In 2D semiconductors, doping offers an effective approach to modulate their optical and electronic properties. Here, an in situ doping of oxygen atoms in monolayer molybdenum disulfide (MoS₂) is reported during the chemical vapor deposition process. Oxygen concentrations up to 20–25% can be reliable achieved in these doped monolayers, MoS_2‐_xO_x. These oxygen dopants are in a form of substitution of sulfur atoms in the MoS₂ lattice and can reduce the bandgap of intrinsic MoS₂ without introducing in‐gap states as confirmed by photoluminescence spectroscopy and scanning tunneling spectroscopy. Field effect transistors made of monolayer MoS_2‐_xO_x show enhanced electrical performances, such as high field‐effect mobility (≈100 cm² V⁻¹ s⁻¹) and inverter gain, ultrahigh devices’ on/off ratio (>10⁹) and small subthreshold swing value (≈80 mV dec⁻¹). This in situ oxygen doping technique holds great promise on developing advanced electronics based on 2D semiconductors.

中文翻译：

用于新型电子学的单层MoS2的原位氧掺杂。

在2D半导体中，掺杂提供了一种有效的方法来调节其光学和电子特性。在此，据报道在化学气相沉积过程中单层二硫化钼（MoS ₂）中的氧原子就地掺杂。在这些掺杂单层MoS _2-_x O _x中，可以可靠地达到20-25％的氧气浓度。这些氧掺杂剂以MoS ₂晶格中硫原子的取代形式存在，可以减少本征MoS ₂的带隙，而不会引入光致发光光谱法和扫描隧道光谱法证实的带隙态。单层MoS _2-_x O _x制成的场效应晶体管显示出增强的电气性能，例如高场效应迁移率（≈100cm ² V ^-1 s ^-1）和逆变器增益，超高器件的开/关比（> 10 ⁹）和较小的亚阈值摆幅值（≈80mV dec ^-1）。这种原位氧掺杂技术在开发基于2D半导体的先进电子学方面具有广阔的前景。

更新日期：2020-10-22

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