Truly Electroforming‐Free Memristor Based on TiO2‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption,Advanced Functional Materials

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Truly Electroforming‐Free Memristor Based on TiO2‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-09-16 , DOI: 10.1002/adfm.202007101
Fuxing Wan ₁ , Qianwen Wang ₁ , Takashi Harumoto ₁ , Tenghua Gao ₂ , Kazuya Ando ₂ , Yoshio Nakamura ₁ , Ji Shi ₁

Affiliation

Oxide‐based memristor devices are being extensively studied as one of the most promising technologies for next generation nonvolatile memory and neuromorphic computing. However, the switching process of such devices relying on the formation and rupture of conductive filaments has not been easily controlled, and thus induces large cycle‐to‐cycle and device‐to‐device variations in resistive switching, which hinders the development of high‐performance memristors. High‐performance memristors that meet the requirements for truly electroforming‐free, highly uniform, and low‐power switching are yet to be developed. Here, a phase‐separated oxide memristor is demonstrated based on a spontaneous phase separation process to form amorphous TiO₂ switching medium distributed among the crystalline CoO grains. The confinement of conductive filaments into the intergrain amorphous oxide phase effectively minimizes the stochasticity of filament formation and rupture, resulting in drastically enhanced switching uniformity. The designed microstructure also facilitates filament formation and dissolution during switching processes and leads to truly electroforming‐free switching and low switching power (simultaneous low switching voltage 0.4 V and low current 2.5 µA).

中文翻译：

基于TiO2-CoO相分离氧化物的真正无电铸忆阻器，具有极高的均匀性和低功耗

基于氧化物的忆阻器器件已被广泛研究，是下一代非易失性存储器和神经形态计算的最有前途的技术之一。但是，依赖于导电细丝的形成和破裂的这种器件的开关过程并不容易控制，因此在电阻开关中会引起较大的周期变化和设备之间的变化，从而阻碍了高功率开关的发展。性能忆阻器。满足真正无电铸，高度均匀和低功耗切换要求的高性能忆阻器尚未开发。在此，基于自发相分离过程形成无定形TiO ₂证明了相分离的氧化物忆阻器交换介质分布在结晶CoO晶粒之间。将导电细丝限制在晶粒间无定形氧化物相中可有效地减小细丝形成和断裂的随机性，从而显着提高开关均匀性。设计的微结构还有助于在切换过程中形成灯丝并使其溶解，并实现真正的无电铸切换和低开关功率（同时低开关电压为0.4 V，低电流为2.5 µA）。

更新日期：2020-09-16

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