Abstract In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (JSC) and open-circuit voltage (VOC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The JSC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of JSC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.

中文翻译：

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具有p-GaN多孔结构的GaN二极管设计优化用于高效Betavoltaic电池

摘要 在这项工作中，我们提出并设计了一种用于高效贝塔伏特 (BV) 电池的具有 p 掺杂 GaN (p-GaN) 多阱结构的 GaN 基二极管。器件的短路电流密度 (JSC) 和开路电压 (VOC) 随掺杂浓度、高度、p-GaN 阱区宽度、阱间间隙、和井区数量。通过应用多孔结构获得更宽的耗尽区，显着改善了器件的 JSC。由于 JSC 的增强，优化后的器件实现了比传统二极管高 8.6% 的输出功率密度。所提出的器件结构显示出作为高效 BV 电池候选者的巨大潜力。