Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al_0.1Ga_0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

将磷引入掺Mg的氮化铝镓（（Al）GaN）外延层中以增强受体活化是改善III型氮化物宽带隙半导体中p型电导率的可能策略。迄今为止，关于结构验证和元素分布，尚未系统评估过P注入的Mg掺杂（Al）GaN结构。在这里，对P离子对结构退化的影响进行了全面的研究。此外，还检查了在不同温度下进行的植入后退火。结果表明，所研究化合物的结构变化为GaN和Al _0.1 Ga _0.9N，由于P注入和随后的热退火恢复遵循相似的趋势。有趣的是，揭示了AlGaN中的P扩散长度高于GaN中的P扩散长度，这可能是由于类似于Mg掺杂剂的含Al化合物中的氧含量较高。另外，（Al）GaN中的初始Mg浓度至关重要，因为太高的Mg掺杂可能是P离子注入后（Al）GaN异质结构电性能下降的主要原因。