For the time being, the creation of surface nano-structures has become an important technological process which plays a paramount role in the electronic devices, as it has a very remarkable feature that they are used in etching without using chemicals. Irradiation of silicon oxide single crystal with slow highly charged ions can produce surface nano-hillocks. The formation mechanism of the created nano-hillocks is a topic of debate. One of the suggested formation mechanisms is a plasma expansion approach. The latter will be used to explain the creation of surface nano-hillocks in silicon oxide single crystal using a fully classical plasma model. For this purpose, classical hydrodynamic ion fluid equations along with Maxwellian or non-Maxwellian electrons distributions are solved numerically to obtain the expansion profiles of the number density, fluid velocity, and electrostatic potential. The relevance of different plasma parameters such as temperature and density ratios, superthermal, and non-extensive parameters is highlighted on the expansion profiles.

暂时，表面纳米结构的形成已成为重要的工艺过程，在电子设备中起着至关重要的作用，因为它具有非常显着的特征，即它们无需化学药品即可用于蚀刻。用缓慢的高电荷离子辐照氧化硅单晶会产生表面纳米小丘。产生的纳米小丘的形成机制是一个争论的话题。建议的形成机理之一是等离子体膨胀法。后者将用于解释使用完全经典的等离子体模型在氧化硅单晶中创建表面纳米小丘。为此，对经典的流体动力离子流体方程以及麦克斯韦或非麦克斯韦电子分布进行数值求解，以获得数密度的扩展曲线，流体速度和静电势。在膨胀曲线上突出显示了不同等离子体参数的相关性，例如温度和密度比，过热和非膨胀参数。