The article provides an opportunity to study the linearity/intermodulation distortion, radiofrequency, and internal physical behavior of a device when the thermionic emission and tunneling transport are brought together. Thermionic emission is arranged vertically in the channel by an additional electron source (AES) along with the conventional horizontal tunneling in an electrically doped tunnel field-effect transistor (C-ED-TFET). The combined mechanism (tunneling and thermionic emission) offers a drastic improvement in the linearity parameters of the C-ED-TFET. In addition, the combined mechanism of carrier transport offers not only better linearity but also drastically improved DC and radiofrequency characteristics compared with the individual phenomena. It is obvious that thermionic emission carrier transport leads to higher leakage current compared to pure tunneling; hence, the presence of an AES causes a rise in the leakage current. Therefore, in the final state of the art...

中文翻译：

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隧穿和热电子发射机理的线性/互调失真分析；设计方案和高频调查

本文为研究将热电子发射和隧穿传输结合在一起时器件的线性/互调失真，射频和内部物理行为提供了机会。热电子发射通过附加电子源（AES）垂直排列在沟道中，并在电掺杂隧道场效应晶体管（C-ED-TFET）中与常规水平隧道一起排列。结合的机理（隧穿和热电子发射）极大地改善了C-ED-TFET的线性参数。此外，与单个现象相比，载流子传输的组合机制不仅提供了更好的线性，而且还大大改善了DC和射频特性。显然，与纯隧穿相比，热电子发射载流子的传输导致更高的泄漏电流。因此，AES的存在导致漏电流的增加。因此，在最先进的条件下...