Higher-silane related reactive species (HSRS) is considered as a key factor in increasing the degree of photo-induced degradation, which is a serious problem for hydrogenated amorphous silicon (a-Si:H) film. Dilution gases (H 2 , He, Ar) are used to control the generation of HSRS. A global model for SiH 4 -containing discharge is developed to investigate the concentration of HSRS. The model calculations are compared with the available measurements, presenting a reasonable agreement. Increasing pressure contributes to more power loss via volumetric processes, which brings about the decline in the electron density and temperature with the same absorbed power. The average electronegativity rises with the silane content or pressure log-linearly, but decreases with the power log-linearly. As the main precursor of the anion formation, ##IMG## [http://ej.iop.org/images/0963-0252/29/9/095012/psstaba7eeieq...] {${\mathrm{S}\mathrm{i}\mathrm{H}}_{3}^{-}$}

中文翻译：

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通过SiH 4等离子体中的稀释气体控制更高的硅烷生成

较高的硅烷相关反应物种（HSRS）被认为是增加光致降解程度的关键因素，这对于氢化非晶硅（a-Si：H）薄膜来说是一个严重的问题。稀释气体（H 2，He，Ar）用于控制HSRS的产生。建立了含SiH 4排放的全局模型以研究HSRS的浓度。将模型计算与可用的测量结果进行比较，得出合理的协议。压力的增加通过体积过程导致更多的功率损耗，这导致在相同吸收功率下电子密度和温度下降。平均电负性随硅烷含量或压力成对数线性增长，但随功率成对数线性下降。作为阴离子形成的主要前体，## IMG ## [http：// ej。