In this paper, the growth of orthorhombic and monoclinic (Al x Ga 1 − x ) 2 O 3 thin films on (00.1) Al 2 O 3 by tin-assisted pulsed laser deposition is investigated as a function of oxygen pressure p (O 2 ) and substrate temperature ##IMG## [http://ej.iop.org/images/0022-3727/53/48/485105/dabaf7dieqn1.gif] {$T_\mathsf{g}$} . For certain growth conditions, defined by ##IMG## [http://ej.iop.org/images/0022-3727/53/48/485105/dabaf7dieqn2.gif] {$T_\mathsf{g}$} ≥ 580 ° C and p (O 2 ) ≤ 0.016 mbar, the orthorhombic κ -polymorph is stabilized. For ##IMG## [http://ej.iop.org/images/0022-3727/53/48/485105/dabaf7dieqn3.gif] {$T_\mathsf{g}$} = 540 ° C and p (O 2 ) ≤ 0.016 mbar, the κ -, and the β -, as well as the spinel γ -polymorph coexist, as illustrated by XRD 2...

中文翻译：

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控制c平面Al 2 O 3上（Al x Ga 1-x）2 O 3薄膜的相形成

本文研究了锡辅助脉冲激光沉积在（00.1）Al 2 O 3上正交晶和单斜（Al x Ga 1-x）2 O 3薄膜的生长与氧气压力p（O 2 ）和基板温度## IMG ## [http://ej.iop.org/images/0022-3727/53/48/485105/dabaf7dieqn1.gif] {$ T_ \ mathsf {g} $}。对于某些生长条件，由## IMG ##定义[http://ej.iop.org/images/0022-3727/53/48/485105/dabaf7dieqn2.gif] {$ T_ \ mathsf {g} $}≥ 580°C且p（O 2）≤0.016 mbar，斜方晶系κ-多晶型物稳定。对于## IMG ## [http://ej.iop.org/images/0022-3727/53/48/485105/dabaf7dieqn3.gif] {$ T_ \ mathsf {g} $} = 540°C and p（ O X）≤0.016 mbar，则κ-和β-以及尖晶石γ-多晶型物共存，如XRD 2所示。