80 nm nominal thick ITO thin films were deposited at room temperature and at low plasma irradiation conditions in an oxygen-free environment by magnetron sputtering. The assessment of the dependence of their structural and optoelectronic properties with the deposition parameters were determined to evaluate their potential in silicon-based solar technology. The results revealed high quality ITO thin films deposited at room temperature and at low direct-current power values up to 75 W. These films showed amorphous and polycrystalline nature, depending on the range of power used. The thin films performance was determined by the figure of merit, reaching the best material developed at room temperature and at 75 W. The successful use of ITO as an effective n-type doped film in a N–P heterojunction silicon-based protocell revealed its feasibility to make up the heterojunction showing its double role as antireflection coating and as substitute of conventional emitters in silicon solar technology. This would open new opportunities of technologically interesting materials fabricated at low manufacturing cost.

通过磁控溅射在无氧环境下于室温和低等离子辐射条件下沉积80 nm标称厚度的ITO薄膜。确定了其结构和光电特性与沉积参数之间的相关性，以评估其在基于硅的太阳能技术中的潜力。结果表明，在室温下和在高达75 W的低直流功率下沉积的高质量ITO薄膜。这些薄膜显示非晶和多晶性质，具体取决于所使用的功率范围。薄膜的性能由品质因数决定，达到室温和75 W时开发的最佳材料。在NP异质结硅基原电池中成功使用ITO作为有效的n型掺杂膜，显示出制造异质结的可行性，显示出它具有减反射涂层和硅太阳能技术中常规发射极的双重作用。这将为以低制造成本制造的技术有趣的材料带来新的机会。