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Investigating the effect of quantized confining energy on the quantum coulomb blockade phenomena in single-electron transistor
Solid State Communications ( IF 2.1 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.ssc.2020.114078
Ali Moulhim , Brijesh Tripathi , Manoj Kumar

Abstract Metal single-electron transistor (SET) and semiconductor quantum dot (QD) are Coulomb blockade (CB) devices having applications in quantum and classical technologies. The quantized confined energy of the confining system increases when the size of this system decreases. This behavior affect transport of charge carrier through SET significantly. This paper presents the results of investigation on the effect of quantized confining energy on the operation conditions of the single-electron transistor, known as quantum Coulomb blockade phenomena. Moreover, modified mathematical description of operation conditions and the quantum Coulomb blockade region of SET has been presented.

中文翻译:

研究量子限制能对单电子晶体管中量子库仑阻塞现象的影响

摘要 金属单电子晶体管(SET)和半导体量子点(QD)是库仑阻塞(CB)器件,在量子技术和经典技术中都有应用。当该系统的尺寸减小时,该约束系统的量化约束能量增加。这种行为会显着影响电荷载流子通过 SET 的传输。本文介绍了量化限制能对单电子晶体管工作条件影响的研究结果,称为量子库仑阻塞现象。此外,还提出了对操作条件和 SET 的量子库仑阻塞区域的修正数学描述。
更新日期:2020-12-01
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