当前位置: X-MOL 学术Solid State Commun. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Effect of Gaussian impurity parameters on the valence and conduction subbands and thermodynamic quantities in a doped quantum wire
Solid State Communications ( IF 2.1 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.ssc.2020.114061
P. Hosseinpour

Abstract In this paper, the influence of impurity parameters on the energy-dispersion spectrum of electrons and holes in a doped quantum wire with Gaussian impurity is studied. The numerical calculations have shown that the energy eigenvalues enhance, if the confinement of carriers increases. Then, the energy eigenvalues rise when the magnetic field, decay length and strength of impurity increase. Also, the type of impurity affects the energy subband structures. So that, the presence of attractive impurity reduces the energy eigenvalues, as compared to repulsive impurity. Moreover, the role of impurity parameters and the external magnetic field as a control parameter on the thermal quantities has been demonstrated in details. The results show that enhancement of magnetic field, decay length and strength of repulsive impurity decreases (increases) the entropy (internal energy) of quantum wire.

中文翻译:

高斯杂质参数对掺杂量子线中价和导子带以及热力学量的影响

摘要 本文研究了杂质参数对高斯杂质掺杂量子线中电子和空穴能量色散谱的影响。数值计算表明,如果载流子的限制增加,则能量特征值会增加。然后,当磁场、衰变长度和杂质强度增加时,能量特征值增加。此外,杂质的类型影响能量子带结构。因此,与排斥性杂质相比,有吸引力的杂质的存在降低了能量特征值。此外,详细证明了杂质参数和外部磁场作为热量控制参数的作用。结果表明,磁场增强,
更新日期:2020-12-01
down
wechat
bug