Abstract In this study, a nanostructure of graphene oxide films was deposited on the surface of silicon oxide to form a hybrid heterojunction diode. The characteristics of dielectric were studied in a wide range of frequencies under the influence of temperature in the range from 223 K to 363 K. The results showed lower and nearly constant values of the dielectric at high frequencies which can be understood under the conception of the inability of the dipole to rotate itself under the influence of high frequency. Moreover, the recorded large capacitance at low frequencies was attributed to the excess capacity value caused by the formed oxide layer. Also, the electrical properties in the dark and under the influence of light illumination were studied in a wide range of temperatures from 303 K to 448 K. The hybrid heterojunction diode exhibited a high rectification ratio at high voltage bias. The extracted series and shunt resistances showed a decrease with increasing temperature, which meant that the characteristics of the device enhanced at a higher temperature. The device also showed a remarkable light sensitivity and the transient photocurrent was detected, confirming the validity of the prepared device for photodiode applications.

中文翻译：

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纳米晶氧化石墨烯/SiO2基杂化异质结器件的电学性能

摘要 在这项研究中，氧化石墨烯薄膜的纳米结构沉积在氧化硅表面，以形成混合异质结二极管。在 223 K 至 363 K 范围内的温度影响下，在很宽的频率范围内研究了电介质的特性。结果表明，在高频下电介质的值较低且几乎恒定，这可以根据偶极子无法在高频影响下自行旋转。此外，在低频下记录的大电容归因于由形成的氧化层引起的过剩容量值。此外，在 303 K 至 448 K 的宽温度范围内研究了黑暗中和光照影响下的电特性。混合异质结二极管在高压偏置下表现出高整流比。提取的串联和并联电阻随着温度的升高而减小，这意味着器件的特性在更高的温度下增强。该器件还表现出显着的光灵敏度，并检测到瞬态光电流，证实了制备的器件用于光电二极管应用的有效性。