In-rich In_xGa_1−xAs epitaxial layers were grown on InP (1 0 0) substrates by a metalorganic vapor phase epitaxy (MOVPE) technique. The effect of Indium (In) composition on the crystalline quality and optical properties are investigated. High resolution X-ray diffraction (HR-XRD) measurement and Raman scattering spectrum are used to evaluate the crystalline quality, the residual strain and dislocation density property. The number of dislocations in the epitaxial layers is found to increase by increasing the Indium content in order to release the stresses due to the epitaxial clamping. Photoluminescence (PL) measurement is used to characterize the optical properties. At 10 K, PL measurements show that the InGaAs band gap redshifts with the indium content. Moreover, the asymmetry at the low-energy side of the PL peak has been attributed to the presence of localized excitons. In all samples, a blue shift of PL peaks is evidenced by increasing the excitation power density, which is in line with the presence of carrier’s localization and non-idealities in this system. Moreover, the temperature-dependence of the PL peak energy displays an unusual red-blue-red shift (S-shaped) behavior when raising the temperature. These observations can be related to the inhomogeneous distribution of indium which gives rise to the appearance of dislocations and other defects which serve as traps for charge carriers. Interestingly, those highly In-content In_xGa_1−xAs epitaxial layers show PL emission located between 1637 and 1811 nm (depending on In content) and thus might be suitable for in the design of novel heterostructure devices such as short wave infrared (SWIR) detectors.

富In _x Ga _1-x通过金属有机气相外延（MOVPE）技术在InP（1 0 0）衬底上生长外延层。研究了铟（In）组成对晶体质量和光学性能的影响。高分辨率X射线衍射（HR-XRD）测量和拉曼散射光谱用于评估晶体质量，残余应变和位错密度特性。发现通过增加铟含量来增加外延层中的位错数量，以便释放由于外延夹持而产生的应力。光致发光（PL）测量用于表征光学性能。在10 K下，PL测量表明InGaAs带隙随铟含量而发​​生红移。此外，PL峰低能侧的不对称性归因于局部激子的存在。在所有样品中，通过增加激发功率密度可以证明PL峰发生蓝移，这与该系统中载流子的局部化和非理想性相符。此外，PL峰值能量的温度依赖性在升高温度时显示出异常的红蓝红移（S形）行为。这些观察结果可能与铟的不均匀分布有关，铟的分布不均会引起位错和其他缺陷的出现，这些缺陷会成为电荷载流子的陷阱。有趣的是，这与该系统中运营商的定位和非理想性相一致。此外，PL峰值能量的温度依赖性在升高温度时显示出异常的红蓝红移（S形）行为。这些观察结果可能与铟的不均匀分布有关，铟的分布不均会引起位错和其他缺陷的出现，这些缺陷会成为电荷载流子的陷阱。有趣的是，这与该系统中运营商的定位和非理想性相一致。此外，PL峰值能量的温度依赖性在升高温度时显示出异常的红蓝红移（S形）行为。这些观察结果可能与铟的不均匀分布有关，铟的分布不均会引起位错和其他缺陷的出现，这些缺陷会成为电荷载流子的陷阱。有趣的是，_x Ga _1-x As外延层显示PL发射位于1637和1811 nm之间（取决于In含量），因此可能适用于新型异质结构器件的设计，例如短波红外（SWIR）检测器。