Abstract To solve the problems related to the re-stacking of reduced graphene oxides (rGO) and further improve their surface chemical behaviors to satisfy supercapacitor demands. The rGO decorated with graphene quantum dots has been successfully prepared via a facile low-power ultrasonic method. It is demonstrated the graphene quantum dots/reduced graphene oxide electrode has a high specific capacitance of 312 F g−1, which is nearly three times higher than that of the reduced graphene oxide (132 F g−1). The enhanced super-capacitive performances of graphene quantum dots/reduced graphene oxide have been attributed to the introduction of graphene quantum dots, which effectively prevent the aggregation and restacking of reduced graphene oxide sheets, promoting its surface exposed to the electrolyte for sufficient mass transfer. Meanwhile, these features provide more pathways for the transportation of electrons between the interlayer of reduced graphene oxide sheets. Afterward, a detailed energy storage mechanism was analyzed.

中文翻译：

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用于高性能超级电容器材料的还原氧化石墨烯的界面工程

摘要 旨在解决还原氧化石墨烯（rGO）重新堆叠的相关问题，并进一步改善其表面化学行为以满足超级电容器的需求。已经通过简便的低功率超声方法成功制备了用石墨烯量子点装饰的 rGO。结果表明，石墨烯量子点/还原氧化石墨烯电极具有 312 F g-1 的高比电容，几乎是还原氧化石墨烯 (132 F g-1) 的三倍。石墨烯量子点/还原氧化石墨烯增强的超电容性能归因于石墨烯量子点的引入，有效防止还原氧化石墨烯片的聚集和重新堆叠，促进其表面暴露于电解质以进行充分的传质。同时，这些特征为还原氧化石墨烯片的夹层之间的电子传输提供了更多途径。随后，分析了详细的储能机制。