Abstract A hybrid direct current magnetron sputtering/high-power impulse magnetron sputtering (DCMS/HiPIMS) technique was used to improve the structural and electrical properties of single-crystal titanium carbide (TiC) thin films. The hetero-epitaxial TiC films, ~ 60 nm thick, were grown on MgO (0 0 1) substrates at temperatures ranging from 200 °C to 800 °C, by co-sputtering of Ti and C targets powered by DCMS and HiPIMS, respectively. Films’ composition and the structural, morphological, and electrical properties were comparatively investigated to those of a set of samples deposited at same temperatures by reactive-DCMS (R-DCMS) in Ar/CH4 atmosphere. The composition and the FWHM of rocking curves of the films deposited by R-DCMS varied from TiC0.84 to TiC0.94 and from 1.38° to 0.64°, respectively, as the growth temperature increased. TiC0.94 - TiC0.96 layers were deposited by hybrid DCMS/HiPIMS method at temperatures higher than 400 °C, fully strained over their full thickness, with FWHM of rocking curves of about 0.13°. Electrical resistivity values measured for these films were of about 155 µΩ cm, significantly close to those corresponding to bulk TiC0.95 single crystals. The resistivity of R-DCMS films is higher by 6% to 23% in comparison with that of the DCMS/HiPIMS grown samples, depending on the growth temperature.

中文翻译：

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使用混合 DCMS/HiPIMS 或反应性 DCMS 工艺通过磁控溅射沉积的异质外延 TiC 薄膜的比较研究

摘要 采用混合直流磁控溅射/高功率脉冲磁控溅射（DCMS/HiPIMS）技术改善单晶碳化钛（TiC）薄膜的结构和电学性能。通过分别由 DCMS 和 HiPIMS 驱动的 Ti 和 C 靶的共溅射，在 MgO (0 0 1) 衬底上在 200 °C 到 800 °C 的温度范围内生长了约 60 nm 厚的异质外延 TiC 薄膜. 薄膜的组成以及结构、形态和电学性质与在相同温度下通过反应性 DCMS (R-DCMS) 在 Ar/CH4 气氛中沉积的一组样品进行了比较研究。随着生长温度的升高，通过 R-DCMS 沉积的薄膜的成分和 FWHM 分别从 TiC0.84 变化到 TiC0.94 和从 1.38° 变化到 0.64°。二氧化碳。94 - TiCO.96 层通过混合 DCMS/HiPIMS 方法在高于 400°C 的温度下沉积，在其整个厚度上完全应变，摇摆曲线的 FWHM 约为 0.13°。对这些薄膜测得的电阻率值约为 155 µΩ cm，与块状 TiCO.95 单晶相当接近。与 DCMS/HiPIMS 生长样品相比，R-DCMS 薄膜的电阻率高出 6% 至 23%，具体取决于生长温度。