Circuits consisting of both memristor and bipolar junction transistor (BJT) were found to be extremely beneficial as the current driven by the transistor enhanced the memristive performances. In this work, memristor-BJT pair was considered and its electronic characteristics were investigated. The pair demonstrated the features of tunable current regulator with reduced circuit complexity. Importantly, the duo exhibited stable characteristics for a large range of frequency variations. Interestingly, the ameliorated linearity was obtained in the memristance-time characteristics. Most importantly, variable negative resistance (VNR) was achieved by modulating the current through the couple. This property was employed in solving linear equations that possess negative slope. In addition, VNR was utilized to implement a low circuit complexity based pulse signal generator with tunable amplitude and on duration. The abovementioned results were obtained through simulation and fabrication routes. The ideas proposed in this work pave the way for futuristic highly reliable oscillators and logic control circuits with reduced on-chip area for portable electronic systems.

发现由忆阻器和双极结型晶体管（BJT）组成的电路非常有用，因为晶体管驱动的电流增强了忆阻性能。在这项工作中，考虑了忆阻器-BJT对，并研究了其电子特性。这两人展示了可调电流调节器的功能，并降低了电路复杂性。重要的是，二重奏在大范围的频率变化中都表现出稳定的特性。有趣的是，忆阻时间特性获得了改善的线性。最重要的是，可变负电阻（VNR）是通过调制流经该对电流的电流来实现的。该特性用于求解具有负斜率的线性方程。此外，VNR用于实现具有可调幅度和持续时间的基于低电路复杂度的脉冲信号发生器。上述结果是通过仿真和制造途径获得的。这项工作中提出的想法为未来的高度可靠的振荡器和逻辑控制电路铺平了道路，从而减少了便携式电子系统的片上面积。