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Langmuir-Blodgett fabrication of large-area black phosphorus-C60 thin films and heterojunction photodetectors.
Nanoscale ( IF 5.8 ) Pub Date : 2020-09-15 , DOI: 10.1039/d0nr04537c
Jian Mao 1 , Orlando Ortiz , Junjia Wang , Alexandre Malinge , Antonella Badia , Stéphane Kéna-Cohen
Affiliation  

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) semiconductor for applications in electronics, optoelectronics, and energy storage. As is the case for many 2D materials, the fabrication of large-area BP thin films remains a considerable challenge. Here, we report the assembly of BP nanosheets into compact thin films using the Langmuir–Blodgett (LB) technique. The overlapping stacking between BP nanosheets is suppressed when the nanosheets are surrounded by fullerene C60 molecules due to physisorption. This allows for the fabrication of large-area BP films (20 mm × 18 mm) with a homogenous nanosheet distribution and negligible oxidation. The fabricated films show measurable absorption up to 2.3 μm. We use these films as active layers to demonstrate mm-sized BP heterojunction photodetectors with mA W−1 scale responsivities from the visible to the near-infrared. Photodetector internal quantum efficiencies at 660 nm and 808 nm are 5% and 1%, respectively.

中文翻译:

Langmuir-Blodgett制造大面积的黑磷C60薄膜和异质结光电探测器。

黑磷(BP)已成为一种有前途的二维(2D)半导体,可用于电子,光电和储能领域。与许多2D材料一样,大面积BP薄膜的制造仍然是一个巨大的挑战。在这里,我们报道使用Langmuir-Blodgett(LB)技术将BP纳米片组装成致密薄膜。当纳米片被富勒烯C 60包围时,可抑制BP纳米片之间的重叠堆叠。分子由于物理吸附。这样就可以制造出具有均匀纳米片分布且可忽略不计的氧化的大面积BP膜(20 mm×18 mm)。制成的薄膜显示出可测量的最大2.3μm吸收。我们将这些膜用作有源层,以展示毫米大小的BP异质结光电探测器,具有从可见光到近红外光的mA W -1比例响应。光电探测器在660 nm和808 nm处的内部量子效率分别为5%和1%。
更新日期:2020-10-08
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