Adjusting compositions of two barriers forming a (111)-oriented InGaAs/AlGaAsSb quantum well (QW) is proposed as a method to eliminate the effective magnetic field due to the Rashba and linear-in-momentum Dresselhaus spin–orbit interactions in the zeroth and first orders in the gate electric field. The resulting suppressed Dyakonov–Perel spin relaxation is used to achieve a high on/off ratio of the spin-relaxation rate at room temperature in a double-QW structure.

中文翻译：

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通过调整（111）量子阱中的势垒组成来抑制有效磁场和自旋弛豫速率

提出了调整形成（111）方向InGaAs / AlGaAsSb量子阱（QW）的两个势垒的组成的调整方法，以消除由于Rashba和零动势上的Dresselhaus自旋轨道相互作用而产生的有效磁场。栅极电场中的第一阶。由此产生的抑制的Dyakonov-Perel自旋弛豫被用于在双QW结构中实现室温下高的自旋弛豫速率的开/关比。