We investigate the effect of silicon nitride (SiN x ) films in n-type front-emitter (n-FE) crystalline Si (c-Si) solar cells on the potential-induced degradation (PID) of n-FE photovoltaic (PV) modules. A negative-bias PID test for a few min does not degrade the performance of PV modules with n-FE cells without SiN x /Si dioxide (SiO 2 ) stacks, unlike in the case of PV modules with cells with SiN x /SiO 2 . This is because of the absence of polarization-type PID. After a longer PID test, the PV modules with n-FE cells without SiN x /SiO 2 show a slower decrease in fill factor (FF), originating from Na introduction into the depletion layer of a p–n junction, than the modules with cells with SiN x /SiO 2 . The mitigation of PID by eliminating SiN x is partly consistent with the results of PV modules with p-type conventional cells withou...

中文翻译：

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氮化硅膜对n型前发射极晶体硅光伏组件电势降解的影响

我们研究n型前发射极（n-FE）晶体硅（c-Si）太阳能电池中氮化硅（SiN x）膜对n-FE光伏（PV）的电势降解（PID）的影响模块。进行数分钟的负偏置PID测试不会降低带有n-FE电池且没有SiN x / SiO 2（SiO 2）堆叠的PV模块的性能，这与带有SiN x / SiO 2电池的PV模块的情况不同。这是因为没有极化型PID。经过更长的PID测试后，具有n-FE电池但没有SiN x / SiO 2的PV模块显示出填充因子（FF）的下降较缓慢，这是由于将Na引入ap-n结的耗尽层所导致的，用SiN x / SiO 2。通过消除SiN x来减轻PID的影响部分与采用p型常规电池的PV组件的结果不符...