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Development of Si-chips with anisotropic rough surface
Surface Topography: Metrology and Properties ( IF 2.0 ) Pub Date : 2020-09-14 , DOI: 10.1088/2051-672x/abb528
J Frhauf 1 , D Hser 2 , E Grtner 1 , A Felgner 2
Affiliation  

The areal roughness of a surface can be described by a number of parameters including the texture aspect ratio S tr as the degree of isotropy or anisotropy. For the comparison of roughness with optical instruments silicon reference samples with the anisotropical roughness of S a ≈ 280 nm and 4 different values of the texture aspect ratio S tr (0.9; 0.75; 0.65; 0.50) have been developed. The anisotropy is produced by scratching of grooves on the lapped surface using a suitable stylus. Different distances of grooves in different regions of the chip result in different values of S tr representing distinct anisotropies. Special marks etched in the silicon chip allow the positioning of the measurement fields with micrometer precision. Measurements performed with a confocal microscope have shown that the grooves do not noticeably influence the parameters of height and the hybrid parameters of roughness. The proces...

中文翻译:

各向异性表面粗糙的硅芯片的开发

表面的表面粗糙度可以通过包括纹理纵横比S tr的多个参数来描述,该纹理纵横比为各向同性或各向异性的程度。为了与光学仪器比较粗糙度,已开发出具有S a≈280 nm的各向异性粗糙度和4个不同的织构纵横比S tr(0.9; 0.75; 0.65; 0.50)的硅参考样品。各向异性是通过使用合适的手写笔刮擦研磨表面上的凹槽而产生的。芯片不同区域中凹槽的不同距离导致代表不同各向异性的S tr的不同值。硅芯片上蚀刻的特殊标记允许以微米精度定位测量区域。用共聚焦显微镜进行的测量表明,凹槽不会明显影响高度参数和粗糙度混合参数。程序...
更新日期:2020-09-15
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