In this article, we demonstrate an integrated Kerr frequency comb source based on the butt-coupling between a III-V (InGaAsP/InP) DFB laser and a silicon nitride (Si3N4) microresonator. The maturity of our silicon platforms permits the fabrication of high-quality factor microresonators with parametric oscillation threshold as low as 300 μW. Combined with a high optical power semiconductor chip, it enables to build an integrated comb source that consumes less than 3 W of electrical power, in less than one cm3. Our source emits an optical comb centered at 1576 nm with a 30 dB bandwidth measured to be 13.6 THz, and a repetition rate of 113.5 GHz. The radio frequency (RF) spectrum associated to the global 10 mW output optical power is characterized both at low frequency and at the beat note frequency, in order to distinguish unstable comb generation from stable comb generation. Finally, we reveal how our hybrid compact source can be used to generate 17-soliton crystal state that is a comb with a 2.04 THz line spacing.

中文翻译：

---

基于InP DFB/Si$_3$N$_4$微环对接耦合的微梳源

在本文中，我们展示了基于 III-V (InGaAsP/InP) DFB 激光器和氮化硅 (Si3N4) 微谐振器对接耦合的集成克尔频率梳源。我们硅平台的成熟允许制造参数振荡阈值低至 300 μW 的高质量因子微谐振器。结合高光功率半导体芯片，它可以构建一个集成梳状源，功耗低于 3 W，不到 1 cm3。我们的光源发射一个光梳，中心波长为 1576 nm，带宽为 30 dB，测量为 13.6 THz，重复率为 113.5 GHz。与全局 10 mW 输出光功率相关的射频 (RF) 频谱在低频和拍音频率下都有特征，以区分不稳定的梳状生成和稳定的梳状生成。最后，我们揭示了我们的混合紧凑源如何用于生成 17 孤子晶体状态，即具有 2.04 THz 线间距的梳状。