Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns, 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s- 1. Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.

中文翻译：

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硅上选择性区域 InAs 纳米线的长内部载流子寿命

通过选择性区域外延 (SAE) 在 Si (111) 上生长不同直径的无催化剂、位置控制的砷化铟 (InAs) 纳米线 (NW)。进行了超快泵浦探针光谱，从中解析和表征了 NW 表面和内部的载流子复合机制。使用 SAE 生长的 NW 显示出高光学质量，显示少数载流子寿命比随机定位 (RP) NW 长两倍以上。发现提取的 SAE-InAs NW 内部复合寿命长达 7.2 ns，比之前对 RP-NW 的测量长 13 倍；和表面复合速度 4154 cm · s- 1。透射电子显微镜显示在 NWs 内有高密度的堆叠缺陷，