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Inverted Configuration of Cu(In,Ga)S2/In2S3 on 3D-ZnO/ZnSnO3 Bilayer System for Highly Efficient Photoelectrochemical Water Splitting
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2020-09-14 , DOI: 10.1021/acssuschemeng.0c04846 Cigdem Tuc Altaf 1 , Nazire Simay Sahsuvar 1 , Nazrin Abdullayeva 1 , Ozlem Coskun 1 , Alihan Kumtepe 1 , Emine Karagoz 1 , Mehmet Sankir 1, 2 , Nurdan Demirci Sankir 1, 2
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2020-09-14 , DOI: 10.1021/acssuschemeng.0c04846 Cigdem Tuc Altaf 1 , Nazire Simay Sahsuvar 1 , Nazrin Abdullayeva 1 , Ozlem Coskun 1 , Alihan Kumtepe 1 , Emine Karagoz 1 , Mehmet Sankir 1, 2 , Nurdan Demirci Sankir 1, 2
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Introducing a zinc stannate, ZnSnO3 (ZTO), layer on hydrothermally grown 3D-zinc oxide (ZnO) nanosheet thin films has been proven to have a quenching effect on the photoluminescence emissions, indicating very slow recombination of photoinduced electron–hole pairs in photoelectrochemical water splitting (PEC) reactions. Motivated by this, the ZnO/ZTO bilayer system has been used as the electron transport layer for copper indium gallium sulfide (CIGS)-based photoelectrodes in PEC applications. Furthermore, the poor photoresistivity of CIGS has been improved via indium sulfide (In2S3) deposition. Consequently, the photoelectrode obtained from the inverted configuration, ZnO/ZTO/CIGS/In2S3, has generated a photocurrent density of 6.4 mA cm–2 at 0.4 V (vs Ag/AgCl), exceeding the performance of ZnO NS/CIGS/In2S3 photoelectrodes by three folds. The highest ABPE and IPCE efficiencies have been calculated as 4.2% and 57%, respectively. More importantly, two cost-effective nonvacuum techniques for large-scale thin film fabrications such as chemical bath deposition (CBD) and ultrasonic spray pyrolysis (USP) methods have been adopted to acquire photoelectrodes with inverted configurations providing an advantageous approach for low-cost photoelectrode design for sustainable energy production.
中文翻译：
用于高效光电化学水分解的3D-ZnO / ZnSnO 3双层系统上Cu（In，Ga）S 2 / In 2 S 3的倒置构型
已证明在水热生长的3D-氧化锌（ZnO）纳米片薄膜上引入锡酸锌ZnSnO 3（ZTO）层对光致发光发射具有猝灭作用，表明光电化学中光诱导的电子-空穴对的重组非常缓慢。水分解（PEC）反应。因此，ZnO / ZTO双层系统已被用作PEC应用中基于铜铟镓硫（CIGS）的光电极的电子传输层。此外，通过硫化铟（In 2 S 3）沉积，改善了CIGS的差的光阻性。因此，从反转配置ZnO / ZTO / CIGS / In 2 S 3获得的光电极，在0.4 V（vs Ag / AgCl）下产生的光电流密度为6.4 mA cm -2，比ZnO NS / CIGS / In 2 S 3光电电极的性能高出三倍。计算得出的最高ABPE和IPCE效率分别为4.2％和57％。更重要的是，已采用两种具有成本效益的非真空技术来进行大规模薄膜制造，例如化学浴沉积（CBD）和超声喷雾热解（USP）方法来获取具有倒置结构的光电极，从而为低成本的光电极提供了一种有利的方法可持续能源生产的设计。
更新日期：2020-10-12
中文翻译：
用于高效光电化学水分解的3D-ZnO / ZnSnO 3双层系统上Cu（In，Ga）S 2 / In 2 S 3的倒置构型
已证明在水热生长的3D-氧化锌（ZnO）纳米片薄膜上引入锡酸锌ZnSnO 3（ZTO）层对光致发光发射具有猝灭作用，表明光电化学中光诱导的电子-空穴对的重组非常缓慢。水分解（PEC）反应。因此，ZnO / ZTO双层系统已被用作PEC应用中基于铜铟镓硫（CIGS）的光电极的电子传输层。此外，通过硫化铟（In 2 S 3）沉积，改善了CIGS的差的光阻性。因此，从反转配置ZnO / ZTO / CIGS / In 2 S 3获得的光电极，在0.4 V（vs Ag / AgCl）下产生的光电流密度为6.4 mA cm -2，比ZnO NS / CIGS / In 2 S 3光电电极的性能高出三倍。计算得出的最高ABPE和IPCE效率分别为4.2％和57％。更重要的是，已采用两种具有成本效益的非真空技术来进行大规模薄膜制造，例如化学浴沉积（CBD）和超声喷雾热解（USP）方法来获取具有倒置结构的光电极，从而为低成本的光电极提供了一种有利的方法可持续能源生产的设计。
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